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February 1999
FDC6306P
Dual P-Channel 2.5V Specified PowerTrench ? MOSFET
General Description
Features
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
?
?
?
?
-1.9 A, -20 V. R DS(on) = 0.170 ? @ V GS = -4.5 V
R DS(on) = 0.250 ? @ V GS = -2.5 V
Low gate charge (3 nC typical).
Fast switching speed.
High performance trench technology for extremely
low R DS(ON) .
Applications
? Load switch
? Battery protection
? Power management
D2
?
SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D1
S1
4
5
3
2
G2
SuperSOT -6
TM
G1
S2
6
1
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
-20
± 8
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
-1.9
A
- Pulsed
-5
P D
Power Dissipation for Single Operation
(Note 1a)
0.96
W
(Note 1b)
(Note 1c)
0.9
0.7
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
° C/W
° C/W
Package Outlines and Ordering Information
Device Marking
. 306
Device
FDC6306P
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
? 1999 Fairchild Semiconductor Corporation
FDC6306P Rev. C
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相关代理商/技术参数
FDC6306P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDC6306P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6
FDC6306P_D87Z 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6306P_NL 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET P-CH 20V 1.9A 6-Pin SuperSOT T/R
FDC6306P_Q 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6308P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC630C 制造商:Fairchild Semiconductor Corporation 功能描述:
FDC6310P 功能描述:MOSFET Dual P-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube